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谁有陈冠希的种子啊？求。收藏
这事 你得问 柏芝霆锋也有可能知道
刚刚全部删了。。。
我不为楼主这样的标题所吸引，也不是被帖子的内容所迷惑。我不是来抢沙发的，也不是来打酱油的。我不是为楼主呐喊加油的，也不是对楼主进行围堵攻击的。我只是为了每天30帖默默奋斗。你是个美女，我毫不关心，你是个怪兽，我决不在意；你是个帅哥，我不会妒忌，你是个畜男，我也不会PS。你的情操再怎么高尚，我也不会赞美，你的道德如何沦丧，我也不为所动。在这个处处都要验证码的时代，不得不弄个牛B的数字来显眼，于是我抄下了这段话，专门用来回帖，好让我每天有固定的积分收入
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& &SOGOU - 京ICP证050897号发芽率：实验种子数有150颗发芽种子有147颗发芽率是百分之几?_作业帮
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发芽率：实验种子数有150颗发芽种子有147颗发芽率是百分之几?
发芽率：实验种子数有150颗发芽种子有147颗发芽率是百分之几?
用发芽种子数147颗除以实验种子数150颗等于0.98
发芽率是98%DS1230ABP-150 (DALLAS) PDF技术资料下载
DS1230ABP-150 供应信息 IC Datasheet 数据表 (2/12 页)
按型号查询：
DS1230ABP-150
256K非易失SRAM
[256k Nonvolatile SRAM]
&&DS1230ABP-150PDF文件：
鼠标右键选目标另存为
不需安装PDF阅读软件
需安装PDF阅读软件
256K非易失SRAM[256k Nonvolatile SRAM]
文件大小：&&215 KPDF页数：
&&12 页联系供应商：&& 品牌Logo:
&&&&DALLAS [ DALLAS SEMICONDUCTOR ]
DS1230ABP-150&&
DS1230ABP-150&&
DS1230ABP-150&&
DS1230ABP-150&&
中文翻译版
DS1230Y/ABDESCRIPTIONThe DSk Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitrywhich constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, thelithium energy source is automatically switched on and write protection is unconditionally enabled toprevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 staticRAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match thepinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devicesin the Low Profile Module package are specifically designed for surface-mount applications. There is nolimit on the number of write cycles that can be executed and no additional support circuitry is required formicroprocessor interfacing.READ MODEThe DS1230 devices execute a read cycle wheneverWE(Write Enable) is inactive (high) andCE(ChipEnable) andOE(Output Enable) are active (low). The unique address specified by the 15 address inputs(A0- A14) defines which of the 32,768 bytes of data is to be accessed. Valid data will be available to theeight data output drivers within tACC(Access Time) after the last address input signal is stable, providingthatCEandOE(Output Enable) access times are also satisfied. IfOEandCEaccess times are notsatisfied, then data access must be measured from the later-occurring signal (CEorOE) and the limitingparameter is either tCOforCEor tOEforOErather than address access.WRITE MODEThe DS1230 devices execute a write cycle whenever theWEandCEsignals are active (low) afteraddress inputs are stable. The later-occurring falling edge ofCEorWEwill determine the start of thewrite cycle. The write cycle is terminated by the earlier rising edge ofCEorWE. All address inputs mustbe kept valid throughout the write cycle.WEmust return to the high state for a minimum recovery time(tWR) before another cycle can be initiated. TheOEcontrol signal should be kept inactive (high) duringwrite cycles to avoid bus contention. However, if the output drivers are enabled (CEandOEactive) thenWEwill disable the outputs in tODWfrom its falling edge.DATA RETENTION MODEThe DS1230AB provides full functional capability for VCCgreater than 4.75 volts and write protects by4.5 volts. The DS1230Y provides full functional capability for VCCgreater than 4.5 volts and writeprotects by 4.25 volts. Data is maintained in the absence of VCCwithout any additional support circuitry.The nonvolatile static RAMs constantly monitor VCC. Should the supply voltage decay, the NV SRAMsautomatically write protect themselves, all inputs become “don’t care,” and all outputs become high-impedance. As VCCfalls below approximately 3.0 volts, a power switching circuit connects the lithiumenergy source to RAM to retain data. During power-up, when VCCrises above approximately 3.0 voltsthe power switching circuit connects external VCCto RAM and disconnects the lithium energy source.Normal RAM operation can resume after VCCexceeds 4.75 volts for the DS1230AB and 4.5 volts for theDS1230Y.FRESHNESS SEALEach DS1230 device is shipped from Dallas Semiconductor with its lithium energy source disconnected,guaranteeing full energy capacity. When VCCis first applied at a level greater than 4.25 volts, the lithiumenergy source is enabled for battery back-up operation.2 of 12